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| SG75S12S Discrete IGBTs Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O P Q Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 SG75S12S IC A 75 VCE V 1200 R S T U V W Maximum Rated Values Parameter Collector-Emitter Voltage DC Collector Current Peak Collector Current Gate Emitter Voltage Total Power Dissipation IGBT Switching SOA Symbol VCES IC ICM VGES Ptot SwSOA (Tvj = 25C, unless specified otherwise) Conditions VGE shorted Ths = 70C Pulse: tp = 1ms, Ths = 70C Values 1200 75 150 Unit V A A V W _ +20 Ths = 25C per switch 340 _ IC = 150A, VCEM = 1200V, VCC < 1000V, _ VGE = +15V, Tvj = 125C voltages measured on auxiliary terminals VCC = 900V, VCEM = 1200V, tp = 10s, _ VGE = +15V, Tvj = 125C 75 Pulse: tp = 1ms, Ths = 70C 150 A A IGBT Short Circuit SOA DC Forward Current Peak Forward Current SCSOA IF IFM Maximum Rated Values (cont.) Parameter Junction Temperature Storage Temperature Isolation Voltage Symbol Tvj Ttstg / Tcop Viso (Tvj = 25C, unless specified otherwise) Conditions Values -40 ~ 150 -40 ~ 125 1min, f = 50Hz 2500 Unit C C V SG75S12S Discrete IGBTs IGBT Characteristic Values Parameter Collector-Emitter Saturation Voltage Collector Cut-off Current Gate-Emitter leakage Current Gate-Emitter Threshold Voltage Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Switching Energy Sybmol (Tvj = 25C, unless specified otherwise) Conditions Tvj = 25C Tvj = 125C min. typ. 2.00 2.20 6 _ +500 4.5 750 6.5 VCE = 25V, VGE = 0V, f = 1MHz 1.6 1.4 IC = 75A, VCC = 600V, Rgon = 15 , _ Tvj = 125C, VGE = +15V IC = 75A, VCC = 600V, Rgoff = 15 , _ Tvj = 125C, VGE = +15V Rgon = 15 IC = 75A, Tvj = 125C, _ VCC = 600V, VGE = +15V, inductive load, integrated up to: 3% VCE (Eon), 1% IC (Eoff) 0.1 0.05 0.50 0.09 8.5 6.5 max. Unit 2.35 V V mA nA V nC nF nF nF s s s s mJ VCE(sat)* IC = 75A, VGE = 15V ICES IGES VCE = 1200V, VGE = 0V, Tvj = 125C _ VCE = 0V, VGE = +20V, Tvj = 125C VGE(TO) IC = 3mA, VCE = VGE Qge Cies Coes Cres td(on) tr td(off) tf Eon IC = 75A, VCE = 600V, VGE = -15 to 15V Eoff Module stray Inductance Plus to Minus Resistance terminal-chip LsDC RCC'+EE' Rgoff = 15 7.0 25 mJ nH m Ths = 25C Ths = 125C 1.25 1.90 * Note 1: Collector emitter saturation voltage is given at die level. SG75S12S Discrete IGBTs Diode Characteristic Values Parameter Forward Voltage Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Energy Resistance terminal-chip Symbol VF* Irrm Qrr trr Erec RCC'+EE' IF = 75A, Tvj = 125C, VCC = 600V, _ Rgon = 15 , VGE = +15V, inductive load, fully integrated Ths = 25C Ths = 125C IF = 75A, Rgon = 15 , VCC = 600V, _ VGE = +15V, Tvj = 125C IF = 75A (Tj = 25C, unless specified otherwise) Conditions Tvj = 25C Tvj = 125C min. typ. 2.00 2.00 75 14 0.35 5.5 1.25 1.90 max. 2.40 Unit V A C s mJ m * Note 2: Forward voltage is gaiven at die level Thermal Characteristics Parameter IGBT Thermal Resistance Junction to Heatsink Diode Thermal Resistance Junction to Heatsink Equivalent IGBT Thermal Resistance Junct. to Case Equivalent Diode Thermal Resistance Junct. to Case Symbol Rth j-h Igbt Rth j-h Diode Rth j-c Igbt Rth j-c Diode (Tj = 25C, unless specified otherwise) Conditions min. typ. max. Unit 0.370 C/W Heatsink: flatness < +/-20m, roughness < 6m without ridge Thermal grease: thickness: 30m < t < 50m 0.740 C/W 0.235 C/W 0.550 C/W SG75S12S Discrete IGBTs Fig. 1 Typ. Output Characteristics at Tvj=25C Fig. 2 Typ. Output Characteristics at Tvj=125C Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Gate charge Characteristi SG75S12S Discrete IGBTs Fig. 5 Typ. Switching Energies per pulse vs on-state current Fig. 6 Typ. Switching Energies per pulse v gate resistor Fig. 7 Typ. Switching times vs on-state current Fig. 8 Typ. Switching times vs gate resistor SG75S12S Discrete IGBTs Fig. 9 Typ. Capacitances vs collector-emitter Voltage Fig. 10 Typ. Diode forward Characteristics Fig. 11 Typ. Reverse Recovery Characteristics vs forward current Fig. 12 Typ. Reverse Recovery Characteristics vs gate resistor SG75S12S Discrete IGBTs Fig. 13 Typ. Thermal impedance vs time |
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